Metal-Catalyst-Free Growth of Carbon Nanotubes and Their Application in Field-Effect Transistors
Metal-Catalyst-Free Growth of Carbon Nanotubes and Their Application in Field-Effect Transistors
复制标题
DOI：
10.1149/1.3534829
复制
发表时间：
2011-01-01
影响因子：
--
通讯作者：
Ashburn, P.
中科院分区：
文献类型：
--
作者：
Uchino, T.;Ayre, G.;Ashburn, P.
介绍了化学气相沉积法在无金属催化剂条件下生长碳纳米管及其在场效应晶体管（fet）中的应用。碳纳米管生长过程在SiO(2)上使用3纳米厚的Ge层，随后退火以产生Ge纳米颗粒。拉曼测量显示存在径向呼吸模式峰，没有无序诱导的D带，表明单壁CNTs具有低缺陷密度。合成的碳纳米管用于制造cntfet，最佳器件具有最先进的3 × 10(8)的通/关电流比和110 mV/ 10的陡峭亚阈值斜率。(C) 2011电化学学会。[DOI: 10.1149/1.3534829]版权所有。
The metal-catalyst-free growth of carbon nanotubes (CNTs) using chemical vapor deposition and the application in field-effect transistors (FETs) is demonstrated. The CNT growth process used a 3-nm-thick Ge layer on SiO(2) that was subsequently annealed to produce Ge nanoparticles. Raman measurements show the presence of radial breathing mode peaks and the absence of the disorder induced D band, indicating single walled CNTs with a low defect density. The synthesized CNTs are used to fabricate CNTFETs and the best device has a state-of-the-art on/off current ratio of 3 x 10(8) and a steep subthreshold slope of 110 mV/decade. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3534829] All rights reserved.