Hydrogen Detection in Individual Diamond Grains on Si(100) Substrate Grown by Microwave-Assisted Chemical Vapor Deposition
Hydrogen Detection in Individual Diamond Grains on Si(100) Substrate Grown by Microwave-Assisted Chemical Vapor Deposition
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通过微波辅助化学气相沉积生长的 Si(100) 基底上单个金刚石颗粒的氢检测
DOI：
10.1143/jjap.45.6398
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发表时间：
2006
影响因子：
1.5
通讯作者：
I. Sakaguchi
中科院分区：
文献类型：
--
作者：
I. Sakaguchi
二次离子质谱法用于检测直径为1-4 µm的单个金刚石颗粒中的氢。在分析中，初级Cs离子束在表面上被微调为50-200 nm的直径，然后沿沿着在具有高横向分辨率的扫描的12 C图像中限定的线进行预溅射和斑点分析的组合。（111）面和（100）面的（H/12 C）强度比分别为1.36×10-2和3.2×10-3。在（100）平面中获得的值是分析中的背景。结果表明，在材料科学中的杂质检测的分析技术的潜力。
Secondary ion mass spectrometry is applied to the detection of hydrogen in individual diamond grains 1–4 µm in diameter. In the analysis, the primary Cs ion beam was fine-tuned at diameters of 50–200 nm on the surface, and then a combination of presputtering and spot analysis was carried out along a line defined in the scanned 12C image with a high lateral resolution. The intensity ratios of (H/12C) in the (111) and (100) planes were determined as having values of 1.36×10-2 and 3.2×10-3, respectively. The value obtained in the (100) plane is background in the analysis. The results demonstrate the potential of the analytical technique for the detection of impurities in materials science.