High-Performance SLCFETs for Switched Filter Applications
High-Performance SLCFETs for Switched Filter Applications
复制标题
适用于开关滤波器应用的高性能 SLCFET
DOI：
10.1109/csics.2016.7751044
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
H. G. Henry
中科院分区：
文献类型：
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作者：
J. Parke;R. Freitag;M. Torpey;R. Howell;E. Stewart;M. Snook;I. Wathuthanthri;Shalini Gupta;B. Nechay;M. King;P. Borodulin;K. Renaldo;H. G. Henry
基于FET的开关滤波器在文献中没有占据很大的空间，因为相对于其他技术，开关的损耗很高。超晶格蜂窝场效应晶体管(SLCFET)是一种低损耗、高隔离度、宽带的射频开关，满足了这一需求。为了验证SLCFET在分路器/组合器网络中的应用能力，制作了一种采用SLCFET开关的4通道可调带通滤波器。每个滤波态都采用了一种新颖的高Q LC电路。MMIC通带的插入损耗约为-6.5分贝，其中-1.3分贝是由网络中的6个单刀双掷(SPDT)开关引起的。在0.5~25 GHz范围内测量爆裂SPDT。测试了35个SPDTS在18 GHz下的插入损耗为-0.41±0.1d B，隔离度为-28.8±0.1d B。
FET-based switched filters do not occupy a large space in the literature due to the high loss of the switches relative to other technologies. The Super-Lattice Castellated Field Effect Transistor (SLCFET) is a low loss, high isolation, broadband RF switch that meets this need. A 4 channel tunable band pass filter employing SLCFET switches in a splitter/combiner network was fabricated in order to demonstrate the enabling capability of the SLCFET for this application. Each filter state employed a novel, high-Q LC circuit. The insertion loss of the MMIC passbands was around -6.5 dB, of which -1.3 dB was attributable to the six Single Pole Double Throw (SPDT) switches in the network. Breakout SPDTs were measured from 0.5 to 25 GHz. Measured insertion loss at 18 GHz was -0.41 ± 0.1 dB and isolation was -28.8 ± 0.1 dB, for 35 SPDTs on the wafer.