Indium-induced lowering of the Schwoebel barrier in the homoepitaxial growth of Cu(100).
Indium-induced lowering of the Schwoebel barrier in the homoepitaxial growth of Cu(100).
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Cu(100) 同质外延生长中，铟诱导施沃贝尔势垒降低。
DOI：
10.1103/physrevb.51.14806
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
Vlieg
中科院分区：
文献类型：
--
作者：
van der Vegt HA;Breeman;Ferrer;Etgens;Torrelles;Fajardo;Vlieg
用表面X射线衍射研究了In对Cu（100）同质外延生长的影响。我们发现，在提高层间传输降低层间扩散（Schwoebel势垒）在步骤边缘的障碍。这种效果是最明显的生长在低温下或当在表面上退火Cu沉积开始之前。增强的岛形核不能解释更平滑的生长。结果与最近的计算结果一致。我们推测In对污染物或缺陷也有中和作用。
We have investigated the effect of In on the homoepitaxial growth of Cu (100) by surface x-ray diffraction. We show that In enhances the interlayer transport by lowering the barrier for interlayer diffusion (Schwoebel barrier) at step edges. This effect is most pronounced for growth at low temperatures or when In is annealed on the surface before Cu deposition is started. Enhanced island nucleation cannot explain the smoother growth. The results are in agreement with recent calculations. We speculate that In also has a neutralizing effect on contaminants or defects.