Correlation between etch pits formed by molten KOH+Na2O2 etching and dislocation types in heavily doped n+-4H–SiC studied by X-ray topography

Correlation between etch pits formed by molten KOH+Na2O2 etching and dislocation types in heavily doped n+-4H–SiC studied by X-ray topography
复制标题

X射线形貌研究重掺杂n+-4H-SiC熔融KOH+Na2O2刻蚀形成的刻蚀坑与位错类型的相关性

DOI:
10.1016/j.jcrysgro.2012.12.011
复制
发表时间:
2013
影响因子:
1.8
通讯作者:
K. Nishikawa
K. Nishikawa
中科院分区:
材料科学3区
文献类型:
--
作者:
Yongzhao Yao;Y. Ishikawa;Y. Sugawara;Kōji Sato;K. Danno;H. Suzuki;T. Bessho;S. Yamaguchi;K. Nishikawa

文献摘要

被引文献

相似文献