Incipient Formation of an Electron Lattice in a Weakly Confined Quantum Wire
Incipient Formation of an Electron Lattice in a Weakly Confined Quantum Wire
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DOI：
10.1103/physrevlett.102.056804
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发表时间：
2009-02-06
影响因子：
8.6
通讯作者：
Ritchie, D. A.
中科院分区：
文献类型：
--
作者：
Hew, W. K.;Thomas, K. J.;Ritchie, D. A.
我们研究了 1D 量子线的低温传输特性，因为使用 GaAs/AlGaAs 异质结构中的分裂栅极和顶栅极的组合来改变限制强度 V-conf 和载流子密度 n(1D)。在中间 V-conf 和 n(1D) 处，我们观察到电导跃升至 4e(2)/h，表明存在双线。进一步减少 n(1D) 后，将返回 2e(2)/h 的稳定状态。我们的结果显示了相互作用的准一维量子线中电子晶格的形成。在存在面内磁场的情况下，两条线的自旋对准能级的混合会产生更复杂的状态。
We study the low-temperature transport properties of 1D quantum wires as the confinement strength V-conf and the carrier density n(1D) are varied using a combination of split gates and a top gate in GaAs/AlGaAs heterostructures. At intermediate V-conf and n(1D), we observe a jump in conductance to 4e(2)/h, suggesting a double wire. On further reducing n(1D), plateau at 2e(2)/h returns. Our results show beginnings of the formation of an electron lattice in an interacting quasi-1D quantum wire. In the presence of an in-plane magnetic field, mixing of spin-aligned levels of the two wires gives rise to more complex states.