Numerical modeling of plasma sheath phenomena in the presence of secondary electron emission
Numerical modeling of plasma sheath phenomena in the presence of secondary electron emission
复制标题
存在二次电子发射时等离子体鞘层现象的数值模拟
DOI：
10.1109/tps.2002.1003876
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发表时间：
2002
影响因子：
1.5
通讯作者：
J. Roussel
中科院分区：
文献类型：
--
作者：
L. Jolivet;J. Roussel
在无碰撞假设下，对麦克斯韦等离子体源与介质表面之间的稳态鞘层进行了数值模拟。研究了一种非物理的数值时间演化方法，以较低的计算时间成本将静电粒子法扩展到大范围的离子质量。本文还考虑了二次电子发射效应，并通过与以前的分析模型在整个离子质量范围内的比较和其他轻离子情况下的数值模拟，验证了麦克斯韦等离子体的所有结果。研究了离子与二次电子流相互作用引起的不稳定性的发生。从而验证了数值次数法的有效性，并指出了其局限性。现在可以在较低的计算时间内模拟电子、二次电子和离子的任意分布函数。
The steady-state, sheath between a Maxwellian plasma source and a dielectric surface was simulated numerically in the collisionless hypothesis. A method of nonphysical numerical time evolution was investigated to extend the electrostatic particle-in-cell method to a large range of ion masses at low cost in calculation time. Secondary electron emission effects were also considered and all of these results for a Maxwellian plasma were validated by comparison with previous analytical models in the entire range of ion masses and with other numerical simulations in the case of light ions. The occurrence of instabilities resulting from the interaction between the ion and the secondary electron flows was also investigated. The numerical times method was thus validated and its limitations characterized. It is now available to simulate arbitrary distribution functions of electrons, secondary electrons, and ions at low cost in calculation time.