Initial stage of ultra-thin SiO2 formation at low temperatures using activated oxygen
Initial stage of ultra-thin SiO2 formation at low temperatures using activated oxygen
复制标题
使用活性氧在低温下形成超薄 SiO2 的初始阶段
DOI：
10.1016/s0169-4332(97)80064-5
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发表时间：
1997
影响因子：
6.7
通讯作者：
H. Matsunami
中科院分区：
文献类型：
--
作者：
T. Fuyuki;Seishi Muranaka;H. Matsunami
根据XPS测量结果，详细研究了Si被活性氧物种氧化的初始阶段。在300-500°C的衬底温度范围内，SiO2薄膜的生长遵循抛物线规律，氧化速率的活化能比热氧化的活化能小一个数量级，表明活性氧的存在促进了氧化过程。所获得的10 - 2 - 10 - 1 nm/min范围的氧化速率适合于实现原子控制的界面形成。
The initial stage of oxidation of Si by activated oxygen species is investigated in detail based on the measurements by XPS. Thin SiO2films were found to grow following the parabolic law and the estimated activation energy of the oxidation rate was about one order of magnitude smaller than that in the thermal oxidation case in a substrate temperature range of 300–500°C, which shows the activated oxygen enhanced the oxidation process. The obtained oxidation rate of a 10−2−10−1nm/min range is appropriate to realize the atomically controlled interface formation.