Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3 Tunnel Junctions

Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3 Tunnel Junctions
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DOI:
10.1021/acs.nanolett.6b04247
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发表时间:
2017-02-01
期刊:
影响因子:
10.8
通讯作者:
Gruverman, Alexei
Gruverman, Alexei
中科院分区:
材料科学1区
文献类型:
--
作者:
Li, Tao;Sharma, Pankaj;Gruverman, Alexei

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由铁电薄膜和功能二维材料组成的杂化结构由于其内在性质之间的界面耦合,可能会表现出独特的特性并揭示出新的现象。在本报告中,我们证明了超薄BaTiO3铁电薄膜的自发极化与相邻二硫化钼(MoS2)层(一种21)窄带隙半导体)的导电性之间的共生相互作用。MoS2电子特性的极化诱导调制导致MoS2- batio3 - srruo3混合铁电隧道结(FTJs)具有巨大的隧道电阻效应,其OFF-to-ON电阻比高达10(4),与使用金属电极的同类型FTJs相比增加了50倍。该效应源于铁电开关对MoS2电极中大多数载流子的可逆积累损耗,这改变了MoS2- batio3界面的势垒。通过BaTiO3中稳定的顺序域结构实现电阻状态的连续可调性,为混合ftj增加了记忆功能。窄带二维半导体与铁电薄膜的结合为开发具有增强性能的电子器件提供了一条新的途径。
Hybrid structures composed of ferroelectric thin films and functional two-dimensional (2D) materials may exhibit unique characteristics and reveal new phenomena due to the cross-interface coupling between their intrinsic properties. In this report, we demonstrate a symbiotic interplay between spontaneous polarization of the ultrathin BaTiO3 ferroelectric film and conductivity of the adjacent molybdenum disulfide (MoS2) layer, a 21) narrow-bandgap semiconductor. Polarization -induced modulation of the electronic properties of MoS2 results in a giant tunneling electroresistance effect in the hybrid MoS2-BaTiO3-SrRuO3 ferroelectric tunnel junctions (FTJs) with an OFF-to-ON resistance ratio as high as 10(4), a 50-fold increase in comparison with the same type of FTJs with metal electrodes. The effect stems from the reversible accumulation depletion of the majority carriers in the MoS2 electrode in response to ferroelectric switching, which alters the barrier at the MoS2-BaTiO3 interface. Continuous tunability of resistive states realized via stable sequential domain structures in BaTiO3 adds memristive functionality to the hybrid FTJs. The use of narrow band 2D semiconductors in conjunction with ferroelectric films provides a novel pathway for development of the electronic devices with enhanced performance.