Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxy
Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxy
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分子束外延制备长波长InAs1−xSbx/GaAs探测器
DOI：
10.1063/1.98647
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发表时间：
1987
期刊：
影响因子：
--
通讯作者：
A. Cho
中科院分区：
文献类型：
--
作者：
C. Bethea;M. Yen;B. Levine;K. Choi;A. Cho
我们用分子束外延在半绝缘GaAs衬底上制备了InAs0.02Sb0.98，并测量了带隙的温度依赖性。光电导探测器进行了测量，并发现具有高的内量子效率（47%）和高的速度（10 ns）。
We prepared InAs0.02Sb0.98 on semi‐insulating GaAs substrates with molecular beam epitaxy and measured the temperature dependence of the band gap. Photoconducting detectors were measured and found to have high internal quantum efficiency (47%) and high speed (10 ns).