CRYSTAL-GROWTH AND MICROSTRUCTURE OF POLYCRYSTALLINE TI1-XALXN ALLOY-FILMS DEPOSITED BY ULTRA-HIGH-VACUUM DUAL-TARGET MAGNETRON SPUTTERING
CRYSTAL-GROWTH AND MICROSTRUCTURE OF POLYCRYSTALLINE TI1-XALXN ALLOY-FILMS DEPOSITED BY ULTRA-HIGH-VACUUM DUAL-TARGET MAGNETRON SPUTTERING
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DOI：
10.1016/0040-6090(93)90244-j
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发表时间：
1993-11-25
期刊：
影响因子：
2.1
通讯作者：
GREENE, JE
中科院分区：
文献类型：
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作者：
WAHLSTROM, U;HULTMAN, L;GREENE, JE
采用双靶超高真空反应磁控溅射技术，在温度T(S)=500℃的热氧化Si(001)衬底上制备了0小于等于x小于等于1的Ti1-xAlxN合金薄膜。由X射线衍射仪测定，0小于或等于x小于或等于0.40的薄膜为单相，具有氯化钠结构和晶面间距d002，随AlN含量的增加而线性减小。平面图透射电子显微镜显示为开放的柱状结构，平均晶粒度[d]相对恒定，约为65 nm。随着x的增加，柱间气孔或空洞的数量逐渐减少。X射线衍射极图测量表明，当x=0(纯TiN)时，柱子向源倾斜约24度，与衬底表面法线成45度角。但是，将x增加到0。1-8形成平行于衬底表面法线的柱状物。经选区电子衍射分析，0.40<；x小于或等于0.90的薄膜为两相(氯化钠和纤锌矿结构)。相分离伴随着[d]减少到大约30 nm。当0小于或等于x小于或等于0.40时，Ti1-xAlxN薄膜的室温电阻率增长缓慢，而随着AlN含量的增加，室温电阻率增加得更快。
Ti1-xAlxN alloy films with 0 less-than-or-equal-to x less-than-or-equal-to 1 were grown on thermally oxidized Si(001) substrates at a temperature T(s) = 500-degrees-C by dual-target ultra-high-vacuum reactive magnetron sputtering in pure N2. Films with 0 less-than-or-equal-to x less-than-or-equal-to 0.40 were single phase with a NaCl structure and an interplanar distance d002, determined by X-ray diffraction, that decreased linearly with increasing AlN content. Plan-view transmission electron microscopy revealed an open columnar structure with a relatively constant average grain size [d] of approximately 65 nm. As x was increased, the amount of intercolumnar pores or voids gradually decreased. X-ray diffraction pole figure measurements showed that with x = 0 (pure TiN) the columns were tilted approximately 24-degrees towards the source, which was located at an angle of 45-degrees to the substrate surface normal. However, increasing x to 0. 1 8 resulted in columns parallel to the substrate surface normal. Films with 0.40 < x less-than-or-equal-to 0.90 were two phase (NaCl and wurtzite structures) as judged by selected area electron diffraction. Phase separation was accompanied by a reduction in [d] to approximately 30 nm. The room temperature resistivity increased slowly for Ti1-xAlxN films with 0 less-than-or-equal-to x less-than-or-equal-to 0.40, and much more rapidly as the AlN content was increased further.