Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle
Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle
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DOI：
10.4028/www.scientific.net/msf.645-648.999
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发表时间：
2010-04
期刊：
影响因子：
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通讯作者：
S. Harada;S. Ito;Makoto Kato;A. Takatsuka;K. Kojima;K. Fukuda;H. Okumura
中科院分区：
文献类型：
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作者：
S. Harada;S. Ito;Makoto Kato;A. Takatsuka;K. Kojima;K. Fukuda;H. Okumura
UMOSFET is theoretically suitable to decrease the on-resistance of the MOSFET. In this study, in order to determine the cell structure of the SiC UMOSFET with extremely low on-resistance, influences of the orientation of the trench and the off-angle of the wafer on the MOS properties are investigated. The channel resistance, gate I-V curves and instability of threshold voltage are superior on the {11-20} planes as compared with other planes. On the vicinal off wafer, influence of the off-angle disappears and the properties on the equivalent planes are almost the same. The obtained results indicate that the extremely low on-resistance with the high stability and high reliability is possible in the SiC UMOSFET by the hexagonal cell composed of the six {11-20} planes on the vicinal off wafer, and actually an extremely low channel resistance was demonstrated on the hexagonal UMOSFET with the six {11-20} planes on the vicinal off wafer.
