Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire
Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire
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DOI：
10.7567/apex.9.032101
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发表时间：
2016-02
影响因子：
2.3
通讯作者：
A. Rishinaramangalam;M. Nami;Michael N. Fairchild;D. Shima;G. Balakrishnan;S. Brueck;D. Feezell
中科院分区：
文献类型：
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作者：
A. Rishinaramangalam;M. Nami;Michael N. Fairchild;D. Shima;G. Balakrishnan;S. Brueck;D. Feezell
采用干涉光刻技术和无催化剂自下而上的金属有机化学气相沉积（MOCVD）技术制备了电注入三角形纳米条纹核壳半极性iii -氮化物led （led）。与独立GaN衬底上的平面生长相比，这种替代方法可以在廉价的c面蓝宝石衬底上实现半极性取向。透射电子显微镜和能量色散x射线光谱学分别揭示了三角形条纹上位置的非均匀量子阱厚度和组成的函数。广泛的电致发光光谱、随电流密度增加而产生的波长位移以及非线性光与电流特性与观测到的量子阱非均匀性密切相关。
The fabrication of electrically injected triangular-nanostripe core–shell semipolar III–nitride LEDs (TLEDs) is demonstrated using interferometric lithography and catalyst-free bottom-up selective-area metal–organic chemical vapor deposition (MOCVD). This alternative approach enables semipolar orientations on inexpensive, c-plane sapphire substrates, in comparison with planar growth on free-standing GaN substrates. Transmission electron microscopy and energy dispersive X-ray spectroscopy reveal nonuniform quantum well thickness and composition, respectively, as a function of location on the triangular stripes. The broad electroluminescence spectra, wavelength shift with increasing current density, and nonlinear light vs current characteristics are well correlated with the observed quantum-well nonuniformities.