Optimization of CMOS pixel sensors for high performance vertexing and tracking
Optimization of CMOS pixel sensors for high performance vertexing and tracking
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DOI：
10.1016/j.nima.2013.06.101
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发表时间：
2013-05
影响因子：
1.4
通讯作者：
J. Baudot;A. Besson;G. Claus;W. Duliński;A. Dorokhov;M. Goffe;C. Hu-Guo;L. Molnar;Xitzel Sanchez-Castro;S. Senyukov;M. Winter
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文献类型：
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作者：
J. Baudot;A. Besson;G. Claus;W. Duliński;A. Dorokhov;M. Goffe;C. Hu-Guo;L. Molnar;Xitzel Sanchez-Castro;S. Senyukov;M. Winter
对于越来越多的带电粒子探测仪器来说，CMOS象素传感器变得越来越重要。这主要来自于它们的高粒度和低材料预算。然而，与基于0.35μm特征尺寸技术的现有器件相比，一些潜在的应用需要更高的读出速度和辐射耐受性。本文给出了用0.18μm工艺制造的新型传感器样机的初步测试结果，该工艺基于相当厚的高阻外延层。基于这些观察到的性能，我们讨论了未来几年的发展战略，以达到与欧洲核子研究中心爱丽丝实验的内跟踪系统(ITS)升级版的技术指标相匹配的全尺寸传感器，其中高达∼10m2的敏感区域可能配备像素传感器。
CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher read-out speed and radiation tolerance than those achieved with the available devices based on a 0.35 μ m feature size technology. This paper shows preliminary test results of new prototype sensors manufactured in a 0.18 μ m process based on a high resistivity epitaxial layer of sizeable thickness. Grounded on these observed performances, we discuss a development strategy over the coming years to reach a full scale sensor matching the specifications of the upgraded version of the Inner Tracking System (ITS) of the ALICE experiment at CERN, for which a sensitive area of up to∼ 10 m 2 may be equipped with pixel sensors.