Lattice-matched HfN buffer layers for epitaxy of GaN on Si
Lattice-matched HfN buffer layers for epitaxy of GaN on Si
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DOI：
10.1063/1.1501447
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发表时间：
2002-08-19
影响因子：
4
通讯作者：
Sasaki, K
中科院分区：
文献类型：
--
作者：
Armitage, R;Yang, Q;Sasaki, K
在(111)和(001)硅衬底上，采用溅射沉积的氮化镓缓冲层，采用等离子体辅助分子束外延生长氮化镓。在HFN/Si(111)和(001)面上均获得了纤锌矿结构的GaN外延层，其无裂纹厚度可达1.2um。在(111)面上生长的GaN的初步结果表明，在11K时的光致发光峰宽为17 meV，非对称的x射线摇摆曲线宽度为20arcmin。在HFN/Si(001)衬底上生长的纤锌矿GaN显示出结构质量下降和特殊的低温发光特性。然而，在(001)表面上的生长导致了几乎无应力的薄膜，这表明可以获得更厚的无裂纹层。(C)2002年美国物理研究所。
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using sputter-deposited hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 mum. Initial results for GaN grown on the (111) surface show a photoluminescence peak width of 17 meV at 11 K, and an asymmetric x-ray rocking curve width of 20 arcmin. Wurtzite GaN on HfN/Si(001) shows reduced structural quality and peculiar low-temperature luminescence features. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained. (C) 2002 American Institute of Physics.