Control of threshold voltage in pentacene thin-film transistors using carrier doping at the charge-transfer interface with organic acceptors
Control of threshold voltage in pentacene thin-film transistors using carrier doping at the charge-transfer interface with organic acceptors
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DOI：
10.1063/1.2099540
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发表时间：
2005-10-10
影响因子：
4
通讯作者：
Tokura, Y
中科院分区：
文献类型：
--
作者：
Abe, Y;Hasegawa, T;Tokura, Y
在并五苯薄膜晶体管（TFT）中，通过在现有沟道顶部沉积额外的有机受体（F（4）TCNQ）层来进行良好控制的载流子掺杂。掺杂浓度可以通过改变覆盖有受体层的面积来预定义，这提供了对阈值栅极电压的控制，同时保持场效应迁移率（类似于1.0 cm（2）/V s）和电流开/关比（>10（5））。这些器件的输运性质进行了讨论的陷阱和释放模型的掺杂有机TFT。(C)2005年美国物理学会。
Well-controlled carrier doping was performed in pentacene thin-film transistors (TFTs) by depositing additional organic acceptor (F(4)TCNQ) layers on top of existing channels. The doping concentration could be predefined by changing the area covered with the acceptor layer, which provides control of the threshold gate voltage, while keeping both the field-effect mobility (similar to 1.0 cm(2)/V s) and the current on/off ratio (>10(5)). The transport properties of these devices are discussed in terms of the trap and release model for the doped organic TFTs. (C) 2005 American Institute of Physics.