Direct observation of Born-Oppenheimer approximation breakdown in carbon nanotubes.
Direct observation of Born-Oppenheimer approximation breakdown in carbon nanotubes.
复制标题
直接观察碳纳米管中的玻恩-奥本海默近似击穿。
DOI:
10.1021/nl802854x
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发表时间:
2009
期刊:
影响因子:
10.8
通讯作者:
S. Cronin
中科院分区:
文献类型:
--
作者:
Adam W. Bushmaker;V. Deshpande;Scott S. Hsieh;M. Bockrath;S. Cronin
Raman spectra and electrical conductance of individual, pristine, suspended, metallic single-walled carbon nanotubes are measured under applied gate potentials. The G(-) band is observed to downshift with small applied gate voltages, with the minima occurring at E(F) = +/-(1)/(2)E(phonon), contrary to adiabatic predictions. A subsequent upshift in the Raman frequency at higher gate voltages results in a "W"-shaped Raman shift profile that agrees well with a nonadiabatic phonon renormalization model. This behavior constitutes the first experimental confirmation of the theoretically predicted breakdown of the Born-Oppenheimer approximation in individual single-walled carbon nanotubes.