Growth-temperature optimization for low-carrier-density In0.75Ga0.25As-based high electron mobility transistors on InP
Growth-temperature optimization for low-carrier-density In0.75Ga0.25As-based high electron mobility transistors on InP
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InP 上低载流子密度 In0.75Ga0.25As 基高电子迁移率晶体管的生长温度优化
DOI：
10.1063/1.2798873
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发表时间：
2007
影响因子：
3.2
通讯作者：
S. Holmes
中科院分区：
文献类型：
--
作者：
P. Simmonds;H. Beere;D. Ritchie;S. Holmes
在未掺杂的In_（0.75）Al_（0.25）As_（0.75）Ga_（0.25）As_（0.75）Al_（0.25）As_（0.75）As_（0.75）Ga_（0.25）As_（0.75）Al_（0.25）As_（0.75）威尔斯量子阱中形成了二维电子气。这种结构的最佳生长温度为410°C，在1.5K时，峰值2DEG电子迁移率和密度值为μ=221000cm2 scinVs和n=1.36×1011cm−2。该电子迁移率等于先前公布的这些未掺杂结构的最高值，但n减小了2倍。这是通过使用明显更薄的InAlAs渐变缓冲层来实现的，这支持了这是2DEG电子源的理论。当n>1.6×1011cm−2时，μ在平行于[011]晶轴的输运中高出10%。这是各向异性表面形态的直接结果。
Two-dimensional electron gases (2DEGs) were formed in undoped In0.75Al0.25As∕In0.75Ga0.25As∕In0.75Al0.25As quantum wells. The optimal growth temperature for this structure is 410°C, with peak 2DEG electron mobility and density values of μ=221000cm2∕Vs and n=1.36×1011cm−2 at 1.5K. This electron mobility is equal to the highest previously published for these undoped structures but with a factor of 2 reduction in n. This has been achieved through the use of a significantly thinner InAlAs graded buffer, which supports the theory that this is the source of the 2DEG electrons. For n>1.6×1011cm−2, μ is shown to be 10% higher for transport parallel to the [011] crystal axis. This is a direct result of anisotropic surface morphology.