Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes
Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes
复制标题
金属辅助化学镀制造纳米多孔 p-GaN 以提高发光二极管的光提取效率
DOI：
10.1063/1.3679150
复制
发表时间：
2012-03-01
期刊：
影响因子：
1.6
通讯作者：
Xu, Xiangang
中科院分区：
文献类型：
--
作者：
Wang, Ruijun;Liu, Duo;Xu, Xiangang
我们报道了金属辅助化学镀制备纳米多孔p-GaN以提高GaN基发光二极管（LED）的光提取效率。虽然长期以来人们一直认为p-GaN不能在室温下被蚀刻，但在这项研究中，我们发现p-GaN表面上的Ag纳米晶体（NC）能够在紫外线（UV）照射下在HF和K2 S2 O 8的混合物中有效地蚀刻p-GaN。它进一步表明，粗糙的GaN/空气界面，使强散射的光子发射的多量子威尔斯（MQW）。光输出功率的测量表明，在10分钟的蚀刻后获得的纳米多孔LED显示出在光输出的32.7%的增强相对于传统的LED在注入电流为20 mA，而没有显着增加的工作电压。相比之下，刻蚀20 min的样品性能下降，这是由于电流拥挤效应和表面复合速率增加所致。
We report metal-assisted electroless fabrication of nanoporous p-GaN to improve the light extraction efficiency of GaN-based light emitting diodes (LEDs). Although it has long been believed that p-GaN cannot be etched at room temperature, in this study we find that Ag nanocrystals (NCs) on the p-GaN surface enable effective etching of p-GaN in a mixture of HF and K2S2O8 under ultraviolet (UV) irradiation. It is further shown that the roughened GaN/air interface enables strong scattering of photons emitted from the multiple quantum wells (MQWs). The light output power measurements indicate that the nanoporous LEDs obtained after 10 min etching show a 32.7% enhancement in light-output relative to the conventional LEDs at an injection current of 20 mA without significant increase of the operating voltage. In contrast, the samples etched for 20 min show performance degradation when compared with those etched for 10 min, this is attributed to the current crowding effect and increased surface recombination rate.