The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide
The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide
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DOI：
10.1143/jjap.42.l625
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发表时间：
2003-06
影响因子：
1.5
通讯作者：
T. Ohshima;K. K. Lee-K.;Y. Ishida;K. Kojima;Yasunori Tanaka;Tetsuo Takahashi;M. Yoshikawa;H. Okumura;K. Arai;T. Kamiya
中科院分区：
文献类型：
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作者：
T. Ohshima;K. K. Lee-K.;Y. Ishida;K. Kojima;Yasunori Tanaka;Tetsuo Takahashi;M. Yoshikawa;H. Okumura;K. Arai;T. Kamiya
在立方碳化硅(3C-SiC)外延层上制备了n沟道金属氧化物半导体场效应晶体管(MOSFET)。在1100℃下热源氧化形成了栅氧化层，在Ar气氛中200℃保温30min后，3C-SiCMOSFET表现出增强型行为。3C-SiCMOSFET的有效沟道迁移率的最大值为260cm2/V·S，栅氧化层的漏电流在低于8.5 mV/cm的电场范围内为几十nA/cm2，击穿开始于8.5 mV/cm左右。
The n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on cubic silicon carbide (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100 °C. The 3C-SiC MOSFETs showed enhancement type behaviors after annealing at 200 °C for 30 min in argon atmosphere. The maximum value of the effective channel mobility of the 3C-SiC MOSFETs was 260 cm2/V·s. The leakage current of gate oxide was of a few tens of nA/cm2 at an electric field range below 8.5 MV/cm, and breakdown began around 8.5 MV/cm.