Spatial distribution of state densities dominating strain sensitivity of carbon nanotubes

Spatial distribution of state densities dominating strain sensitivity of carbon nanotubes
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主导碳纳米管应变敏感性的态密度空间分布

DOI:
10.1109/sispad.2014.6931589
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发表时间:
2014
期刊:
Proceedings of 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
影响因子:
--
通讯作者:
and Hideo Miura
and Hideo Miura
中科院分区:
--
文献类型:
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作者:
Masato Ohnishi;Ken Suzuki;and Hideo Miura

文献摘要

相似文献

在任何电子器件和传感器中,由于热变化或不同材料之间的晶格失配而引起内部应变。因此,预期当碳纳米管(CNT)用于电子器件时,它们的电子性质因变形而改变。在这项研究中,我们研究了在径向应变下的碳纳米管的带隙的状态密度分布的变化机制。我们发现,态密度的空间分布决定了其应变灵敏度,从而决定了碳纳米管电子性质的应变灵敏度。我们还计算了通过变形的CNT的电流的变化。研究结果表明,态密度分析对新型电子器件和纳米机电系统的开发以及保证其可靠性能具有重要意义。
In any electronic devices and sensors, internal strain is induced because of the thermal change or the lattice mismatch between different materials. It is, therefore, expected that when carbon nanotubes (CNTs) are used for electronic devices, their electronic properties are changed caused by the deformation. In this study, we study the mechanism of the change in the band gap of CNTs under the radial strain in terms of state density distribution. We found that the spatial distribution of the state density dominates its strain sensitivity, and thus, the strain sensitivity of electronic properties of CNTs. We also calculated the change in the current through the deformed CNTs. The founding indicates that the state density analysis should be useful for the development of novel electronic devices and nano electro mechanical systems and for assuring their reliable performance.