Scanning tunnelling microscope studies of angstrom-scale Co3O4 nanowires
Scanning tunnelling microscope studies of angstrom-scale Co3O4 nanowires
复制标题
DOI：
10.1088/0957-4484/21/33/335605
复制
发表时间：
2010-08
期刊：
影响因子：
3.5
通讯作者：
Yi Sun;Rui Xu;Jiyong Yang;Lin He;J. Nie;R. Dou;Wei Zhou;Lin Guo
中科院分区：
文献类型：
--
作者：
Yi Sun;Rui Xu;Jiyong Yang;Lin He;J. Nie;R. Dou;Wei Zhou;Lin Guo
我们报道了自下而上组装原子尺度的构建块，它由四个Co3 +阳离子，两个Co2 +阳离子和八个O2−阴离子组成，用于生成直径从0.5到3nm的一维Co3O4纳米结构。通过对照实验研究了Co3O4纳米线的生长机理。研究了单一阳离子缺陷对一维纳米结构外延生长的影响。我们在直接实验观察的基础上提出了一种自我纠偏生长机制。这一机制将帮助我们理解合成晶体通常具有均匀的成分和均匀的形态，尽管在生长过程中缺陷的存在是不可避免的。
We report the bottom-up assembly of an atomic-scale building block, which consists of four Co3 + cations, two Co2 + cations, and eight O2 − anions, for generating one-dimensional Co3O4 nanostructures with diameters ranging from 0.5 to 3 nm. Controlled experiments were carried out and the growth mechanism of the Co3O4 nanowires was investigated. The effects of a single cation defect on the epitaxial growth of the one-dimensional nanostructures were investigated. We proposed a self-rectifying growth mechanism on the basis of direct experimental observations. This mechanism will help us to understand synthesized crystals usually exhibiting homogeneous composition and uniform morphology, though the existence of defects is inevitable in the growth process.