A submicrometer Nb/AlO(x)/Nb Josephson junction
A submicrometer Nb/AlO(x)/Nb Josephson junction
复制标题
亚微米 Nb/Al2O(x)/Nb 约瑟夫森结
DOI：
10.1063/1.341792
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发表时间：
1988
影响因子：
3.2
通讯作者：
S. Hasuo
中科院分区：
文献类型：
--
作者：
T. Imamura;S. Hasuo
制造了高质量的亚微米 Nb/AlOx/Nb 约瑟夫森结。通过使用薄 SiO2 掩模对上 Nb 电极进行阳极氧化来定义结区域。通过在 SiO2 绝缘体中接触孔的反应离子蚀刻过程中利用阳极氧化 Nb 作为蚀刻停止层，我们可以制作比接触孔尺寸更小的结。使用无应力铌作为结电极对于实现良好的电流-电压特性至关重要。生产出小至 0.7 μm 见方的高质量 Nb/AlOx/Nb 结。对于 6800 A/cm2 的 jc，质量参数 Vm 大于 30 mV。
High‐quality, submicrometer Nb/AlOx /Nb Josephson junctions were fabricated. The junction area was defined by anodizing an upper Nb electrode using a thin SiO2 mask. By utilizing the anodized Nb as an etch stop during the reactive ion etching of the contact hole in an SiO2 insulator, we could make a junction smaller than the contact hole size. Using stress‐free Nb for the junction electrodes was crucial in achieving good current‐voltage characteristics. High‐quality Nb/AlOx /Nb junctions as small as 0.7 μm square were produced. The quality parameter Vm was greater than 30 mV for a jc of 6800 A/cm2.