Structures of ultra-thin atomic-layer-deposited TaNx films
Structures of ultra-thin atomic-layer-deposited TaNx films
复制标题
DOI：
10.1063/1.1711176
复制
发表时间：
2004-05
影响因子：
3.2
通讯作者：
Y. Wu;A. Kohn;M. Eizenberg
中科院分区：
文献类型：
--
作者：
Y. Wu;A. Kohn;M. Eizenberg
原子层沉积(ALD)技术以其精确的原子级厚度控制、良好的一致性和低温下大面积的均匀性等优点，成为当前和未来微电子制造领域的研究热点。它已用于制备超薄TaNx薄膜，作为铜金属化的扩散阻挡层。在这项研究中，用一套互补的分析技术对超薄(1.5-10 nm)原子层沉积薄膜的成分、结构和稳定性进行了表征。结果表明，AlD-Tanx薄膜中的N/Ta原子浓度比约为2，与薄膜厚度无关，并在750°C以下的温度范围内进行了热处理。当薄膜厚度为1.5 nm时，沉积的AlD Tanx薄膜仍具有面心立方结构的NaCl型纳米晶结构。在600℃及更高温度下进行热退火后，薄膜的结构没有发生变化，但结构发生了明显的变化。
Atomic layer deposition (ALD) is an attractive technique in fabrication of microelectronics presently and in the future, for its accurate thickness control in atomic scale, excellent conformality, and uniformity over large areas at low temperature. It has been adapted and used in deposition of ultrathin TaNx films as diffusion barriers for Cu metallization. In this study, composition, structure, and stability of ultra-thin (1.5–10 nm) atomic layer deposited films are characterized by a set of complementary analytical techniques. The results indicate that the N to Ta atomic concentration ratio in the ALD TaNx films is approximately 2, independent of the film thickness and annealing up to 750 °C. Hydrogen, oxygen, and carbon are detected as impurities within the as-deposited films. The as-deposited ALD TaNx films have an fcc NaCl-type nanocrystalline structure even when the film thickness is 1.5 nm. Following thermal anneal at 600 °C and higher, the films do not undergo a structural change except for an inc...