Graphoepitaxy of sexithiophene and orientation control by surface treatment
Graphoepitaxy of sexithiophene and orientation control by surface treatment
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DOI：
10.1063/1.2913180
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发表时间：
2008-04-15
影响因子：
3.2
通讯作者：
Shimada, Toshihiro
中科院分区：
文献类型：
--
作者：
Ikeda, Susumu;Saiki, Koichiro;Shimada, Toshihiro
研究了影响有机半导体α-异噻吩基(6T)在热氧化硅衬底上梯度外延的因素，发现微槽间距越大，梯度外延程度越低。一个更重要的发现是，通过简单的表面处理可以改变面内取向。在UV/臭氧处理的基板上(亲水条件)，6T的b轴平行于沟槽。用六甲基二硅氧烷进一步的表面处理(在疏水条件下)改变了这种面内取向90度。这种变化是由于槽壁最顶层的化学物种(官能团)与有机分子之间的相互作用，这是有机梯度外延所特有的行为，可用于器件加工中的最佳取向控制。根据实验结果，讨论了引起梯度外延的形核和生长过程。(C)2008年美国物理研究所。
The factors influencing the graphoepitaxy of organic semiconductor alpha-sexithiophene (6T) on thermally oxidized silicon substrates were studied and it was discovered that a wider pitch in the microgrooves decreased the degree of graphoepitaxy. A more significant finding was that in-plane orientation could be changed by simple surface treatment. On UV/ozone-treated substrates (hydrophilic condition), the b-axis of 6T was parallel to the grooves. Further surface treatment with hexamethyl-disiloxane (under hydrophobic conditions) changed this in-plane orientation by 90 degrees. This change is due to the interaction between the topmost chemical species (functional groups) of the groove walls and organic molecules, a behavior peculiar to organic graphoepitaxy and exploitable for optimal orientation control in device processing. The nucleation and growth processes that cause the graphoepitaxy are discussed, based on the experimental results. (C) 2008 American Institute of Physics.