Magnetic Properties and Microstructure of FePt Films With MgTiON Intermediate Layer

Magnetic Properties and Microstructure of FePt Films With MgTiON Intermediate Layer
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DOI:
10.1109/tmag.2017.2704617
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发表时间:
2017-11-01
影响因子:
2.1
通讯作者:
Chang, Ching Wei
Chang, Ching Wei
中科院分区:
工程技术4区
文献类型:
--
作者:
Tsai, Jai Lin;Li, Hsu Kang;Chang, Ching Wei

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研究了在MgTiON中间层上生长的FePT薄膜的磁性能和微观结构。在395℃的温度下,在靶材上溅射(MgTi)沉积了MgTiON层,在CrRU(002)/玻璃上形成了(002)织构。在450℃的温度下,在MgTiON衬底上制备了厚度为10 nm的FePT薄膜,其磁化强度为垂直磁化强度,面外矫顽力为3.62 kOe。较小的FePt面外矫顽力可能来自于较低的有序度和连续的层状结构,这提供了较容易的磁畴壁运动。为了促进FePT薄膜的有序化,在溅射过程中,在MgTiON(30 Nm)层上覆盖了厚度为1~3 nm的较薄的MOC层。厚度为4~10 nm的FePt薄膜表现出垂直的磁各向异性,其面外矫顽力提高到11.9~15.3Koe。用有序度和微观结构解释了FePt面外矫直力的显著变化。在较薄的MOC界面上制备FePT薄膜时,岛状生长占主导地位,并且在溅射过程中,来自MOC层的多余碳被向上扩散以促进FePT的有序化。结果表明,MoC/MgTiON中间层具有较高的平面外矫顽力是由于分离的FePT岛具有较高的有序度和磁区壁钉扎效应。
The magnetic properties and microstructure of FePt films grown on MgTiON intermediate layer were studied. The MgTiON layer was deposited by sputtered (MgTi)ON target at 395 degrees C. The MgTiON (002) texture was formed on CrRu (002)/glass. Furthermore, the 10 nm thick FePt film was deposited on MgTiON at 450 degrees C. The FePt shows perpendicular magnetization with out-of-plane coercivity of 3.62 kOe. Smaller FePt out-of-plane coercivity may come from lower ordering degree and continuous layer structure, which provides easy domain wall motion. To promote the ordering of FePt film, thinner MoC layer with thickness of 1 to 3 nm was capped on MgTiON (30 nm) layer during sputtering process. The FePt films with thickness from 4 to 10 nm show perpendicular magnetic anisotropy and the out-of-plane coercivities were increased to 11.9-15.3 kOe. The significant change of FePt out-of-plane coercivity was explained by ordering degree and microstructure. The island growth was dominated when FePt film prepared on thinner MoC interface and the excess carbon from MoC layer was diffused up to promote the ordering of FePt during sputtering. As a result, higher FePt out-of-plane coercivity on MoC/MgTiON intermediate layer was due to higher ordering degree and domain wall pinning effect in separated FePt islands.