Understanding resolution limit of displacement Talbot lithography
Understanding resolution limit of displacement Talbot lithography
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DOI：
10.1364/oe.27.005918
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发表时间：
2019-03-04
期刊：
影响因子：
3.8
通讯作者：
Shields, P. A.
中科院分区：
文献类型：
--
作者：
Chausse, P. J. P.;Le Boulbar, E. D.;Shields, P. A.
位移塔尔博特光刻技术（DTL）是一种低成本的具有亚微米周期性特征的大面积光刻技术。它的应用领域无法证明深紫外光刻的成本是合理的，如等离子体、光子晶体和超材料，并与纳米压印和激光干涉光刻等技术竞争。它是基于通过周期性图案掩模的相干光的干涉。然而，影响该技术分辨率限制的因素尚不清楚。通过计算机模拟，我们展示了掩模参数对可以实现的特征大小的影响，并描述了为了成功的模式应该优化的单独的优点数字。对于掩模开口的六边形和方形阵列，振幅掩模和相位掩模都被考虑。对于大音高，振幅掩模显示出最好的分辨率；然而，对于小间距，相位掩模是优越的，因为所需的曝光时间更短。我们还展示了掩模间距的微小变化如何极大地影响可实现的分辨率。因此，本研究为有针对性地选择DTL新掩模提供了重要信息。由美国光学学会根据知识共享署名4.0许可发布。
Displacement Talbot lithography (DTL) is a new technique for patterning large areas with sub-micron periodic features with low cost. It has applications in fields that cannot justify the cost of deep-UV photolithography, such as plasmonics, photonic crystals, and metamaterials and competes with techniques, such as nanoimprint and laser interference lithography. It is based on the interference of coherent light through a periodically patterned photomask. However, the factors affecting the technique's resolution limit are unknown. Through computer simulations, we show the mask parameter's impact on the features' size that can be achieved and describe the separate figures of merit that should be optimized for successful patterning. Both amplitude and phase masks are considered for hexagonal and square arrays of mask openings. For large pitches, amplitude masks are shown to give the best resolution; whereas, for small pitches, phase masks are superior because the required exposure time is shorter. We also show how small changes in the mask pitch can dramatically affect the resolution achievable. As a result, this study provides important information for choosing new masks for DTL for targeted applications. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License.