Transient response of photodetectors
Transient response of photodetectors
复制标题
光电探测器的瞬态响应
DOI：
10.1063/1.361449
复制
发表时间：
1996
影响因子：
3.2
通讯作者：
V. R. Wicks
中科院分区：
文献类型：
--
作者：
G. Dunn;A. Walker;A. Vickers;V. R. Wicks
本文报道了用漂移扩散和蒙特卡罗方法计算金属-半导体-金属光电探测器的暂态响应和实验数据。我们已经展示了载流子和位移电流的相互作用，场和电荷分布的不均匀，以及热电子效应如何决定了瞬时响应中的观测结构。特别是，我们已经证明了触点下方未被照亮的区域在形成瞬变响应峰值中所起的作用。我们还证明了瞬时响应中的峰值不必归因于速度过冲，并研究了接触间隔对探测器响应的定标。
Calculations by drift diffusion and Monte Carlo methods and experimental data on the transient response of metal–semiconductor–metal photodetectors are reported. We have shown how the interplay of carrier and displacement currents, inhomogeneities in field and charge distributions, and hot electron effects determines observed structure in the transient response. In particular, we have demonstrated the role played by the regions under the contacts that are not illuminated in forming peaks in the transient response. We have also demonstrated that the peaks in the transient response need not be attributed to velocity overshoot and the scaling of detector response with contact separation has been studied.