Ion implantation range distributions in silicon carbide
Ion implantation range distributions in silicon carbide
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DOI：
10.1063/1.1569666
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发表时间：
2003-06-01
影响因子：
3.2
通讯作者：
Svensson, BG
中科院分区：
文献类型：
--
作者：
Janson, MS;Linnarsson, MK;Svensson, BG
对152个单能H-1、H-2、Li-7、B-11、N-14、O-16、Al-27、P-31、Ga-69和As-75在碳化硅（SiC）中的一至四阶分布矩R-p、Δ R（p）、γ和β进行了组装。在本研究中对其中50例进行了分析，而其余的植入数据来自文献。对于离子与有限的实验数据，额外的双折射模拟使用最近开发的二元碰撞近似代码的晶体材料。最小二乘拟合的分析函数的分布时刻与注入能量提供了一个经验的离子注入模拟器使用皮尔逊频率函数的基础。(C)2003年，美国物理学会。
The first to fourth order distribution moments, R-p, DeltaR(p), gamma, and beta, of 152 single energy H-1, H-2, Li-7, B-11, N-14, O-16, Al-27, P-31, Ga-69, and As-75 implantations into silicon carbide (SiC) have been assembled. Fifty of these implantations have been performed and analyzed in the present study while the remaining mplantation data was compiled from the literature. For ions with a limited amount of experimental data, additional implantations were simulated using a recently developed binary collision approximation code for crystalline materials. Least squares fits of analytical functions to the distribution moments versus implantation energy provide the base for an empirical ion implantation simulator using Pearson frequency functions. (C) 2003 American Institute of Physics.