Growth and characterisation of Ga(NAsSi) alloy by metal-organic vapour phase epitaxy
Growth and characterisation of Ga(NAsSi) alloy by metal-organic vapour phase epitaxy
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DOI：
10.1016/j.jcrysgro.2014.03.038
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发表时间：
2014-06-15
影响因子：
1.8
通讯作者：
Volz, K.
中科院分区：
文献类型：
--
作者：
Bushell, Z. L.;Ludewig, P.;Volz, K.
本文综述了金属有机气相外延法（MOVPE）外延生长Ga（NAsBi）的结果，以及随后样品的光学和结构表征。Ga(NAsBi)/GaAs多量子阱（MQW）样品在400℃和450℃的温度下生长在GaAs（001）衬底上。三乙基镓（TEGa）、叔丁基larsin （TBAs）、三甲基铋（TMBi）和不对称二甲基肼（UDMHy）作为前体。二次离子质谱（SIMS）分析表明，合金中Bi含量与N含量无关。研究发现，生长过程中氮素含量取决于UDMHy和TMBi的供给。高分辨率x射线衍射（HR-XRD）、扫描透射电子显微镜（STEM）和原子力显微镜（AFM）测试表明，样品具有良好的晶体质量。对于在450℃下生长的含有1.8% Bi和高达1.8% N的样品，光导光谱（PR）显示，带隙随着N含量的增加而减小，N含量为141 +/- 22 meVi% N。
This paper summarises results of the epitaxial growth of Ga(NAsBi) by metal-organic vapour phase epiLaxy (MOVPE) and the subsequent optical and structural characterisations of the samples. Ga(NAsBi)/GaAs multi-quantum well (MQW) samples are grown at 400 degrees C and single layers at 450 degrees C on GaAs (001) substrates. Triethylgallium (TEGa), tertiarybutylarsine (TBAs), trimethylbismuth (TMBi) and unsymmetrical dimethylhydrazine (UDMHy) are used as precursors. Secondary ion mass spectrometry (SIMS) shows that the Bi content is independent of the N content in the alloy. It is found that the N content depends on both UDMHy and TMBi supply during growth. High resolution X-ray diffraction (HR-XRD), scanning transmission electron microscopy (STEM) and atomic force microscopy (AFM) measurements show that samples with good crystalline quality can be realised. For samples containing 1.8% Bi and up to 1.8% N grown at 450 degrees C, photorellectance spectroscopy (PR) shows a decrease in the band gap with increasing N content of 141 +/- 22 meVi% N. (C) 2014 Elsevier B.V. All rights reserved.