Q-Band Ferromagnetic Resonance Study of Fe Thin Films on GaAs(001) Deposited by RF Magnetron Sputtering
Q-Band Ferromagnetic Resonance Study of Fe Thin Films on GaAs(001) Deposited by RF Magnetron Sputtering
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DOI：
10.1109/tmag.2011.2158847
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发表时间：
2011-06
影响因子：
2.1
通讯作者：
Y. Takahashi;H. Ikeya;N. Inaba;F. Kirino;M. Ohtake;M. Futamoto
中科院分区：
文献类型：
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作者：
Y. Takahashi;H. Ikeya;N. Inaba;F. Kirino;M. Ohtake;M. Futamoto
采用射频磁控溅射方法在Ga As(001)衬底上制备了Fe(001)外延薄膜，并用工作在Q波段(35 GHz)的铁磁共振波谱研究了薄膜的磁特性。共振场的面内角度依赖于沿[100]([110])容易(硬)方向的四重磁各向异性。各向异性常数略小于大块Fe的磁晶各向异性常数。铁磁共振线宽由Fe薄膜的磁阻尼力引起，很窄(？lt；；70Oe)，且与面内磁场方向无关。结果表明，观测线宽很好地估计了Fe薄膜中Gilbert型损耗的上界。
The magnetic properties of epitaxial Fe(001) films, prepared on GaAs(001) substrates by RF magnetron sputtering, were investigated by ferromagnetic resonance spectroscopy operating at Q-band (35 GHz). The in-plane angle dependence of the resonance fields showed four-fold magnetic anisotropy with an easy (hard) direction along [100] ([110]). The anisotropy constant was slightly smaller than the magnetocrystalline anisotropy constant of bulk Fe. Ferromagnetic resonance linewidths, caused by the magnetic damping of Fe films, were narrow (<;70 Oe) and independent of the in-plane magnetic field directions. It will be shown that the observed linewidth gives good estimate of the upper bound of the Gilbert-type damping in Fe thin films.