SmCo based sputtered films with CaCu5 and TbCu7 structures
SmCo based sputtered films with CaCu5 and TbCu7 structures
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具有 CaCu5 和 TbCu7 结构的 SmCo 基溅射薄膜
DOI：
10.1063/1.364624
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发表时间：
1997
影响因子：
3.2
通讯作者：
S. Shaheen
中科院分区：
文献类型：
--
作者：
R. Rani;F. Cadieu;X. Qian;W. Mendoza;S. Shaheen
SmCo基薄膜含有20原子%的铁和Sm从15.5至17原子%的变化已被合成显示从有序的CaCu 5到无序的TbCu 7相的过渡。对于任一相，在沉积过程中存在的退磁能量可以导致具有在膜平面上随机张开的微晶c轴的膜。通过调整溅射参数以对应于膜沉积期间相对高或相对低的表面迁移率，已经可以合成具有（200）或（110）织构的高各向异性CaCu 5相。已经有可能合成具有非常低的BR（λ）/BR（λ）=0.042的有序CaCu 5型膜。以前，SmCo基单相TbCu 7结构膜已经合成为具有接近通常的高能产物2-17的成分，标称为7原子%的Cu和2原子%的Zr。用振动样品磁强计、超导量子干涉仪、x射线衍射和扫描电镜等手段对薄膜进行了表征。
SmCo based films containing 20 at. % Fe and with Sm varying from 15.5 to 17 at. % have been synthesized to show the transition from ordered CaCu5 to disordered TbCu7 phase. For either phase, the demagnetization energy present during deposition can result in films with the crystallite c axes randomly splayed onto the film plane. It has been possible to synthesize the high anisotropy CaCu5 phase with either a (200) or (110) texture by adjusting the sputtering parameters to correspond to either a relatively high or relatively low surface mobility during the film deposition. It has been possible to synthesize ordered CaCu5 type films with very low values of BR(⊥)/BR(∥)=0.042. Previously, SmCo based single phase TbCu7 structure films have been synthesized with close to the usual high energy product 2–17 compositions of nominally 7 at. % Cu and 2 at. % Zr. The films have been characterized by vibrating-sample magnetometer and superconducting quantum interference device magnetometry, x-ray diffraction, and scann...