Preparation and electrical properties of highly (111)-oriented (Na0.5Bi0.5)TiO3 thin films by a sol-gel process
Preparation and electrical properties of highly (111)-oriented (Na0.5Bi0.5)TiO3 thin films by a sol-gel process
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DOI：
10.1021/cm035222l
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发表时间：
2004-11
影响因子：
8.6
通讯作者：
Xin-gui Tang;Jie Wang;Xiaoxing Wang;H. Chan
中科院分区：
文献类型：
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作者：
Xin-gui Tang;Jie Wang;Xiaoxing Wang;H. Chan
钛酸铋钠，(Na 0.5 Bi 0.5 )TiO 3 (NBT)，通过溶胶-凝胶工艺在Pt/Ti/SiO 2 /Si基底上生长薄膜。以硝酸铋、乙酸钠、正丁醇钛为原料，乙酸和甲醇为溶剂，制备旋涂前驱体溶液，得到高(111)取向的钙钛矿NBT薄膜。 Au/NBT/Pt薄膜电容器在200 kV/cm的外加电场下表现出磁滞回线，剩余极化(P r )和矫顽电场(E c )值分别为20.9 μC/cm 2 和112 kV/cm。在100kHz下，薄膜的介电常数和损耗tan 6 分别为171和0.024。漏电流取决于电压极性。当电场范围为 0 至 167 kV/cm 且 Pt 电极负偏压时，NBT/Pt 界面表现出肖特基发射特性。 Au/NBT 界面形成欧姆接触。 Au 电极负偏压时的传导电流表现出空间电荷限制电流 (SCLC) 行为。
Sodium bismuth titanate, (Na 0.5 Bi 0.5 )TiO 3 (NBT), thin films were grown on Pt/Ti/SiO 2 /Si substrates via a sol-gel process. The precursor solution for spin-coating was prepared from bismuth nitrate, sodium acetate, and titanium n-butoxide as starting materials, and acetic acid and methanol as solvents, and pervoskite NBT films with high (111)-orientation have been obtained. The Au/NBT/Pt thin film capacitor showed a hysteresis loop at an applied electric field of 200 kV/cm with remanent polarization (P r ) and coercive electric field (E c ) values of 20.9 μC/cm 2 and 112 kV/cm, respectively. At 100 kHz, the dielectric constant and loss tan 6 of the film were 171 and 0.024, respectively. The leakage current depended on the voltage polarity. When an electrical field ranges from 0 to 167 kV/cm and with the Pt electrode biased negatively, the NBT/Pt interface exhibits a Schottky emission characteristic. The Au/NBT interface forms an ohmic contact. The conduction current when the Au electrode is biased negatively shows space-charge-limited current (SCLC) behavior.