Microwave Study of Field-Effect Devices Based on Graphene/Aluminum Nitride/Graphene Structures.
Microwave Study of Field-Effect Devices Based on Graphene/Aluminum Nitride/Graphene Structures.
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DOI：
10.1038/srep44202
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发表时间：
2017-03-09
影响因子：
4.6
通讯作者：
Klein N
中科院分区：
文献类型：
--
作者：
Adabi M;Lischner J;Hanham SM;Mihai AP;Shaforost O;Wang R;Hao L;Petrov PK;Klein N
通常采用金属栅电极来控制基于石墨烯的场效应器件的电导率。在许多光学应用中，这种电极缺乏透明度是一个关键的限制因素。我们展示了双层石墨烯场效应器件的工作概念，该器件利用溅射氮化铝薄膜作为电介质栅极材料。对于这个系统，我们表明，石墨烯电阻可以通过两个石墨烯层之间的电压进行修改。我们研究如何第二栅极电压施加到硅背栅修改测得的微波传输数据在8.7 GHz左右。如基于玻尔兹曼方程的数值模拟所证实的，该系统类似于具有不同本征掺杂水平的两个石墨烯层的并联电路。所获得的实验结果表明，石墨烯-氮化铝-石墨烯器件概念为太赫兹到光学器件以及射频声学器件提供了有前途的技术平台，其中也可以利用氮化铝中的压电性。
Metallic gate electrodes are often employed to control the conductivity of graphene based field effect devices. The lack of transparency of such electrodes in many optical applications is a key limiting factor. We demonstrate a working concept of a double layer graphene field effect device that utilizes a thin film of sputtered aluminum nitride as dielectric gate material. For this system, we show that the graphene resistance can be modified by a voltage between the two graphene layers. We study how a second gate voltage applied to the silicon back gate modifies the measured microwave transport data at around 8.7 GHz. As confirmed by numerical simulations based on the Boltzmann equation, this system resembles a parallel circuit of two graphene layers with different intrinsic doping levels. The obtained experimental results indicate that the graphene-aluminum nitride-graphene device concept presents a promising technology platform for terahertz- to- optical devices as well as radio-frequency acoustic devices where piezoelectricity in aluminum nitride can also be exploited.