Fabrication of Yb3+/Er3+ codoped Bi2O3–WO3–TeO2 pedestal type waveguide for optical amplifiers
Fabrication of Yb3+/Er3+ codoped Bi2O3–WO3–TeO2 pedestal type waveguide for optical amplifiers
复制标题
用于光放大器的 Yb3+/Er3+ 共掺杂 Bi2O3–WO3–TeO2 基座型波导的制造
DOI：
10.1016/j.optmat.2014.10.027
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发表时间：
2014
影响因子：
3.9
通讯作者：
E. G. Melo
中科院分区：
文献类型：
--
作者：
V. Cacho;D. Silva;T. Assumpção;L. Kassab;M. I. Alayo;E. G. Melo
本文首次报道了用射频溅射法制备的Yb ~（3+）/Er ~（3+）共掺Bi_2O_3-WO_3-TeO_2薄膜基台光波导的实验结果。薄膜沉积使用Ar/O2等离子体在5 mTorr的压力和RF功率为40 W的衬底上的硅晶片。的基座波导结构的定义是使用传统的光学光刻，然后等离子体蚀刻。在20-100 μm宽范围内，在633和1050 nm波长处分别获得了约2.0 dB/cm和2.5 dB/cm的传输损耗。在633 nm和1050 nm处分别测量了波导宽度为10 μm和12 μm的单模传播;对于更大的波导宽度，获得了多模传播。在980 nm激发下，1530 nm处的内部增益为5.6 dB，测量为1.5 cm波导长度（Δ 3.7 dB/cm）。研究结果表明，Yb ~（3+）/Er ~（3+）共掺Bi_2 O_3-WO_3-TeO_2基座光波导用于光放大器是可行的。
We report, for the first time to our knowledge, experimental results on pedestal waveguides produced with Yb3+/Er3+codoped Bi2O3–WO3–TeO2thin films deposited by RF Sputtering for photonic applications. Thin films were deposited using Ar/O2plasma at 5 mTorr pressure and RF power of 40 W on substrates of silicon wafers. The definition of the pedestal waveguide structure was made using conventional optical lithography followed by plasma etching. Propagation losses around 2.0 dB/cm and 2.5 dB/cm were obtained at 633 and 1050 nm, respectively, for waveguides in the 20–100 μm width range. Single-mode propagation was measured for waveguides width up to 10 μm and 12 μm, at 633 nm and 1050 nm, respectively; for larger waveguides widths multi-mode propagation was obtained. Internal gain of 5.6 dB at 1530 nm, under 980 nm excitation, was measured for 1.5 cm waveguide length (∼3.7 dB/cm). The present results show the possibility of using Yb3+/Er3+codoped Bi2O3–WO3–TeO2pedestal waveguide for optical amplifiers.