15-GHz modulation performance of integrated DFB laser diode EA modulator with identical multiple-quantum-well double-stack active layer
15-GHz modulation performance of integrated DFB laser diode EA modulator with identical multiple-quantum-well double-stack active layer
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DOI：
10.1109/lpt.2002.804664
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发表时间：
2002-12
影响因子：
2.6
通讯作者：
B. Stegmueller;E. Baur;M. Kicherer
中科院分区：
文献类型：
--
作者：
B. Stegmueller;E. Baur;M. Kicherer
单片集成InGaAsP 1.55-/spl μ/m脊波导分布反馈激光二极管与电吸收调制器使用相同的有源多量子阱（MQW）层结构，具有两种不同的量子阱类型表现出低阈值电流<18 mA。200-/spl μ/m长调制器的3-dBe截止频率超过15 GHz。10-Gb/s的传输实验，电压摆幅为1.0 V/sub pp/证明了这种新的集成方案的潜力。
Monolithically integrated InGaAsP 1.55-/spl mu/m ridge waveguide distributed feedback laser diodes with an electroabsorption modulator using an identical active multiquantum-well (MQW) layer structure with two different QW types exhibit low-threshold currents <18 mA. The 3-dBe cutoff frequency of 200-/spl mu/m-long modulators exceeds 15 GHz. 10-Gb/s transmission experiments with a voltage swing of 1.0 V/sub pp/ demonstrate the potential of this novel integration scheme.