Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence
Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence
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DOI：
10.7567/jjap.55.05fj01
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发表时间：
2016-05-01
影响因子：
1.5
通讯作者：
Hoffmann, Axel
中科院分区：
文献类型：
--
作者：
Nippert, Felix;Karpov, Sergey;Hoffmann, Axel
我们提出了一种新技术来评估 InGaN/GaN 基发光二极管 (LED) 中发生的与 Shockley-Read-Hall、辐射和俄歇复合相对应的复合系数。该技术将作为 LED 驱动电流函数的 LED 效率测量与微分载流子寿命 (DLT) 的小信号时间分辨光致发光测量相结合。利用根据经验 ABC 模型得出的效率和 DLT 之间的关系，可以评估所有三个重组系数。建议的技术应用于许多单量子阱和多量子阱 LED，以更深入地了解最终限制其效率的机制。 (C) 2016 日本应用物理学会
We suggest a novel technique for the evaluation of the recombination coefficients corresponding to Shockley-Read-Hall, radiative, and Auger recombination that occur in InGaN/GaN-based light-emitting diodes (LEDs). This technique combines the measurement of the LED efficiency as a function of LED drive current with a small-signal time-resolved photoluminescence measurement of the differential carrier life time (DLT). Using the relationships between the efficiency and DLT following from the empirical ABC-model, one can evaluate all three recombination coefficients. The suggested technique is applied to a number of single-and multiple-quantum well LEDs to gain a deeper insight into the mechanisms ultimately limiting their efficiency. (C) 2016 The Japan Society of Applied Physics