SAW Filters Composed of Interdigital Schottky and Ohmic Contacts on AlGaN/GaN Heterostructures
SAW Filters Composed of Interdigital Schottky and Ohmic Contacts on AlGaN/GaN Heterostructures
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由 AlGaN/GaN 异质结构上的叉指肖特基和欧姆接触组成的 SAW 滤波器
DOI：
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发表时间：
2007
影响因子：
4.9
通讯作者：
K. Hohkawa
中科院分区：
文献类型：
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作者：
N. Shigekawa;K. Nishimura;T. Suemitsu;H. Yokoyama;K. Hohkawa
提出了由AlGaN/GaN异质结上的叉指肖特基接触和欧姆接触构成的声表面波(SAW)滤波器。当肖特基触点反向偏置时，声表面波的贡献出现在滤波器的射频特性中。同时制备的高电子迁移率晶体管的声表面波信号的起始值和阈值电压几乎彼此一致。我们还获得了40分贝的隔离度。这些结果表明，采用叉指肖特基和欧姆接触的AlGaN/GaN异质结可能实现基于SAW的功能器件
We proposed surface acoustic wave (SAW) filters composed of interdigital Schottky and ohmic contacts on AlGaN/GaN heterostructures. The contribution of the SAWs appeared in the radio frequency characteristics of the filters when the Schottky contacts were reverse biased. Onsets of the SAW signals and the threshold voltage of simultaneously fabricated high-electron mobility transistors were found to almost agree with one another. We also obtained an isolation of >40 dB. These results suggest that SAW-based functional devices are likely to be realized using AlGaN/GaN heterostructures with interdigital Schottky and ohmic contacts