High Signal‐to‐Noise Chemical Sensors Based on Compensated Organic Transistor Circuits
High Signal‐to‐Noise Chemical Sensors Based on Compensated Organic Transistor Circuits
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DOI：
10.1002/admt.201900410
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发表时间：
2019-08
影响因子：
6.8
通讯作者：
Yingli Chu;Hui Li;Jia Huang;H. Katz
中科院分区：
文献类型：
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作者：
Yingli Chu;Hui Li;Jia Huang;H. Katz
工作稳定性和灵敏度是有机场效应晶体管（OFET）传感器实际应用的关键问题。由于周围环境引起的固有器件偏置应力和电导漂移，随时间的不稳定性可能会掩盖对感兴趣分析物的响应。这些不稳定性是 OFET 传感器实际应用的众所周知的障碍。首次证明，创新且简单的双 OFET 电路设计可以有效补偿源自偏置应力和/或环境的漂移，同时保持化学灵敏度并提高信噪比。这是通过一个光敏 OFET 的照明来补偿另一个化学传感 OFET 的漂移来实现的，尽管原则上可以使用一对具有由任何机制产生的相反漂移的 OFET。与单独的基于 OFET 的传感器相比，该电路显着提高了环境稳定性，并且通过检测代表性污染物二氧化氮 (NO2) 和氨 (NH3) 也证明了其对化学蒸气的增强响应。这表明通过任何机制补偿漂移的 OEFT 都可以带来稳定的传感器电路。
Operational stability and sensitivity are key issues for the practical application of organic field‐effect‐transistor (OFET)‐based sensors. Instability over time due to intrinsic device bias stress and conductance drift induced by the ambient environment can obscure responses to analytes of interest. These instabilities are well‐known hindrances to the practical application of OFET sensors. It is demonstrated for the first time that an innovative and simple two‐OFET circuit design can effectively compensate the drifts originating from bias stress and/or the environment while maintaining chemical sensitivity and increasing signal‐to‐noise ratio. This is enabled by illumination of one photosensitive OFET to compensate the drift of the other chemical‐sensing OFET, though in principle a pair of OFETs with opposing drifts generated by any mechanism could be used. The circuit, compared with individual OFET‐based sensors, achieves significantly increased environmental stability, and its enhanced response to chemical vapors is also demonstrated by detecting the representative pollutants nitrogen dioxide (NO2) and ammonia (NH3). This shows that OEFTs with drifts being compensated by any mechanism can lead to stabilized sensor circuits.