The growth of AgGaTe2 layers on glass substrates with Ag2Te buffer layer by closed space sublimation method
The growth of AgGaTe2 layers on glass substrates with Ag2Te buffer layer by closed space sublimation method
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采用封闭空间升华法在带有 Ag2Te 缓冲层的玻璃基板上生长 AgGaTe2 层
DOI：
10.1002/pssc.201400267
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
and M. Kobayashi
中科院分区：
文献类型：
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作者：
A. Uruno;A. Usui;Y. Takeda;T. Inoue;and M. Kobayashi
用封闭空间升华法在Mo/玻璃衬底上生长了AgGaTe2薄膜。在AgGaTe2和Mo层之间插入了Ag2Te缓冲层，以提高生长的质量。用X射线衍射仪(X射线衍射仪)分析了样品的结晶性能，用扫描电子显微镜(SEM)分析了样品的表面形貌。扫描电子显微镜观察表明，生长在Mo/玻璃上的Ag2Te层呈膜过滤结构。比较了有无缓冲层生长的薄膜的X射线衍射谱。具有Ag2Te缓冲层的AgGaTe2层出现了来自AgGaTe2的衍射峰，并且观察到了112的很强的衍射峰。另一方面，可以清楚地看到，没有缓冲层生长的层没有显示出与AgGaTe2相关的强峰，而是与Ga-Te化合物相关的峰。由此，AgGaTe2层的结晶学性质通过Ag2Te缓冲层的插入而显著改善。此外，当插入Ag2Te缓冲层时，表面形貌变得光滑。由于膜过滤结构在边缘出现了大量的扭结，AgGaTe2的成核位密度可能增加了。Ga和Mo之间的化学反应也被消除。研究表明，缓冲层的插入及其表面形貌是生长高质量AgGaTe2薄膜的重要参数。(2015Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
The AgGaTe2layer growth was performed by the closed space sublimation method on the Mo/glass substrate. The Ag2Te buffer layer was inserted between AgGaTe2and Mo layers, to improve the quality of grown layers. Crystallographic properties were analyzed by x‐ray diffraction (XRD), and the surface morphologies were analyzed by scanning electron microscopy (SEM). The Ag2Te layer grown on the Mo/glass exhibited a membrane filter structure from the SEM observation. XRD spectra of layers grown with and without the buffer layer were compared. The AgGaTe2layer with the Ag2Te buffer layer exhibited peaks originating from AgGaTe2, and a very strong diffraction peak of 112 was observed. On the other hand, it was cleared that the layer grown without the buffer layer exhibited no strong peaks associated with AgGaTe2, but Ga‐Te compounds. From this, crystallographic properties of the AgGaTe2layer were drastically improved by the insertion of the Ag2Te buffer layer. Moreover, the surface morphology exhibited a smooth surface when the Ag2Te buffer layer was inserted. The nucleation site density of AgGaTe2was probably increased since the membrane filter structure exhibited numbers of kinks at the edge. Chemical reaction between Ga and Mo was also eliminated. It was cleared that the insertion of the buffer layer and its surface morphology were an important parameter to grow high quality AgGaTe2layers. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)