Observation of Mobility Enhancement in Strained Si and SiGe Tri-Gate MOSFETs with Multi-Nanowire Channels Trimmed by Hydrogen Thermal Etching
Observation of Mobility Enhancement in Strained Si and SiGe Tri-Gate MOSFETs with Multi-Nanowire Channels Trimmed by Hydrogen Thermal Etching
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通过氢气热蚀刻修整多纳米线通道的应变硅和硅锗三栅 MOSFET 迁移率增强的观察
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
S. Takagi
中科院分区：
文献类型：
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作者：
T. Tezuka;E. Toyoda;S. Nakaharai;N. Hirashita;N. Sugiyama;N. Taoka;Y. Yamashita;O. Kiso;M. Harada;T. Yamamoto;S. Takagi
采用新型的各向异性热蚀刻技术，在H2气氛中制备了应变Si和SiGe三栅纳米线mosfet，其线边粗糙度显著降低，边壁光滑。有效的载流子迁移率测量表明，应变Si - NW n- mosfet和应变Si - NW p- mosfet的迁移率分别比未应变Si - NW n-和p- mosfet提高了1.9和1.6倍。研究还表明，NWs的侧壁形状通过其表面粗糙度散射的差异对迁移率有很大的影响。
Strained Si and SiGe tri-gate nanowire (NW) MOSFETs with significantly reduced line-edge roughness and smooth sidewalls were fabricated by a novel anisotropic thermal etching technique in H2 atmosphere. Effective carrier mobility measurements revealed mobility enhancements for the strained-Si NW n-MOSFETs and the strained-SiGe NW p-MOSFETs by factors of 1.9 and 1.6 against unstrained Si NW n- and p-MOSFETs, respectively. It was also shown that the sidewall shapes of the NWs have a great impact on the mobility via the difference in the surface roughness scattering on the sidewalls.