Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes

Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes
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DOI:
10.1063/1.4892974
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发表时间:
2014-08
影响因子:
4
通讯作者:
Jonathan J. Wierer;A. Allerman;I. Montaño;M. Moseley
Jonathan J. Wierer;A. Allerman;I. Montaño;M. Moseley
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Jonathan J. Wierer;A. Allerman;I. Montaño;M. Moseley

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研究表明,在∼为270 nm的AlGaN紫外光发射二极管(UVLED)中,反射散射结构对光提取效率的提高受光偏振的影响。研究了三种不同反射散射结构的UVLED,并与无散射结构的标准UVLED进行了比较。光的偏振以及因此各种UVLED内的光传播方向因量子阱(QW)厚度的变化而改变。与没有散射结构的UVLED相比,具有反射散射结构的UVLED的光提取效率的提高随着平行于量子波面传播的出射光的比例的增加而增加。此外,光提取效率随着到反射散射结构的平均距离减小而增加。
The improvement in light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes (UVLEDs) emitting at ∼270 nm is shown to be influenced by optical polarization. Three UVLEDs with different reflective scattering structures are investigated and compared to standard UVLEDs without scattering structures. The optical polarization and therefore the direction of light propagation within the various UVLEDs are altered by changes in the quantum well (QW) thickness. The improvement in light extraction efficiency of the UVLEDs with reflective scattering structures increases, compared to the UVLEDs without scattering structures, as the fraction of emitted light propagating parallel to the QW plane increases. Additionally, the light extraction efficiency increases as the average distance to the reflective scattering structures decreases.