Growth of an oriented Bi40−xInxTe60 (x = 3, 7) thermoelectric material by seeding zone melting for the enhancement of chemical homogeneity
Growth of an oriented Bi40−xInxTe60 (x = 3, 7) thermoelectric material by seeding zone melting for the enhancement of chemical homogeneity
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DOI：
10.1039/c4ce00577e
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发表时间：
2015-04
期刊：
影响因子：
3.1
通讯作者：
Dongmei Liu;H. Engelhardt;Xinzhong Li;A. Löffler;M. Rettenmayr
中科院分区：
文献类型：
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作者：
Dongmei Liu;H. Engelhardt;Xinzhong Li;A. Löffler;M. Rettenmayr
开发了一种带晶种的区域熔化技术，用于制备具有增强化学均匀性的定向 Bi40−xInxTe60 (at%, x = 3; 7) 热电材料。样品和种子各自的初始成分是根据伪二元 Bi2Te3-In2Te3 相图选择的，该相图是借助在温度梯度下重新固化的前糊状区域通过实验重新确定的。已成功制造出一种定向 Bi40−xInxTe60 块体材料，该材料在沿生长方向的区域熔化区域的整个长度上具有接近目标值的均匀成分。
A zone melting technique with seeding has been developed to prepare oriented Bi40−xInxTe60 (at%, x = 3; 7) thermoelectric material with enhanced chemical homogeneity. The respective initial compositions of the sample and the seed were chosen according to the pseudo-binary Bi2Te3–In2Te3 phase diagram that was experimentally redetermined with the aid of a former mushy zone that was resolidified in a temperature gradient. An oriented Bi40−xInxTe60 bulk material with a uniform composition close to the target value over the entire length of the zone-melted region along the growth direction has been successfully manufactured.