Single photon emitters based on Ni/Si related defects in single crystalline diamond
Single photon emitters based on Ni/Si related defects in single crystalline diamond
复制标题
DOI：
10.1007/s00340-011-4402-x
复制
发表时间：
2011-03-01
影响因子：
2.1
通讯作者：
Becher, C.
中科院分区：
文献类型：
--
作者：
Steinmetz, D.;Neu, E.;Becher, C.
研究了离子注入IIa型CVD金刚石中产生的单一Ni/Si色心。通过测试不同的离子剂量组合，我们发现Ni和Si的剂量都有一个上限（分别为10（12）cm（-2）和10（10）cm（-2））。这是由于产生了过量的荧光背景。我们证明了创建的Ni/Si相关的中心，显示在767 nm和775 nm之间的光谱范围内的发射和窄线宽的千分之一2 nm的FWHM在室温下。强度自相关函数的测量证明单光子发射。所研究的色心可以粗略地分为两组：从光子统计和激发和发射的偏振度，我们发现，一些色心表现为两个级别，单偶极子系统，而其他中心表现出三个级别和两个正交偶极子的贡献。此外，一些色心具有稳定和明亮的发射，饱和计数率高达78 kcounts/s，而其他色心则显示波动的计数率和三级闪烁。
We present investigations on single Ni/Si related color centers produced via ion implantation into single crystalline type IIa CVD diamond. By testing different ion dose combinations we show that there is an upper limit for both the Ni and the Si dose (10(12) cm(-2) and 10(10) cm(-2) resp.) due to the creation of excess fluorescent background. We demonstrate creation of Ni/Si related centers showing emission in the spectral range between 767 nm and 775 nm and narrow line-widths of a parts per thousand 2 nm FWHM at room temperature. Measurements of the intensity autocorrelation functions prove single-photon emission. The investigated color centers can be coarsely divided into two groups: Drawing from photon statistics and the degree of polarization in excitation and emission, we find that some color centers behave as two-level, single-dipole systems whereas other centers exhibit three levels and contributions from two orthogonal dipoles. In addition, some color centers feature stable and bright emission with saturation count rates up to 78 kcounts/s whereas others show fluctuating count rates and three-level blinking.