Breakdown Voltage for Superjunction Power Devices With Charge Imbalance: An Analytical Model Valid for Both Punch Through and Non Punch Through Devices
Breakdown Voltage for Superjunction Power Devices With Charge Imbalance: An Analytical Model Valid for Both Punch Through and Non Punch Through Devices
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DOI：
10.1109/ted.2009.2032595
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发表时间：
2009-12-01
影响因子：
3.1
通讯作者：
Udrea, Florin
中科院分区：
文献类型：
--
作者：
Wang, Han;Napoli, Ettore;Udrea, Florin
本文提出了一种非平衡超结（SJ）器件的电场和击穿电压（BV）的解析模型。该分析技术使用的叠加方法治疗的不对称电荷的支柱作为一个多余的电荷分量叠加在一个平衡的电荷分量。建议的双指数模型是能够准确地预测电场和BV的不平衡SJ器件在穿通和非穿通条件。当器件的行为类似于PiN二极管或高电导层时，该模型在极高水平的电荷不平衡下也相当准确。分析模型进行了比较，对电荷不平衡SJ器件的数值模拟和实验结果。
An analytical model for the electric field and the breakdown voltage (BV) of an unbalanced superjunction (SJ) device is presented in this paper. The analytical technique uses a superposition approach treating the asymmetric charge in the pillars as an excess charge component superimposed on a balanced charge component. The proposed double-exponential model is able to accurately predict the electric field and the BV for unbalanced SJ devices in both punch through and non punch through conditions. The model is also reasonably accurate at extremely high levels of charge imbalance when the devices behave similarly to a PiN diode or to a high-conductance layer. The analytical model is compared against numerical simulations of charge unbalanced SJ devices and against experimental results.