A Transformerless Intelligent Power Substation: A three-phase SST enabled by a 15-kV SiC IGBT

A Transformerless Intelligent Power Substation: A three-phase SST enabled by a 15-kV SiC IGBT
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DOI:
10.1109/mpel.2015.2449271
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发表时间:
2015-09
影响因子:
2.3
通讯作者:
K. Mainali;A. Tripathi;S. Madhusoodhanan;A. Kadavelugu;D. Patel;S. Hazra;K. Hatua;S. Bhattacharya
K. Mainali;A. Tripathi;S. Madhusoodhanan;A. Kadavelugu;D. Patel;S. Hazra;K. Hatua;S. Bhattacharya
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文献类型:
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作者:
K. Mainali;A. Tripathi;S. Madhusoodhanan;A. Kadavelugu;D. Patel;S. Hazra;K. Hatua;S. Bhattacharya

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固态Transformer(SST)是一种很有前途的电力电子解决方案,除了Transformer的传统升压/降压功能外,它还提供电压调节、无功功率补偿、直流源可再生能源集成和通信功能。中压(MV)电网接口正在获得广泛关注,以增加可再生能源的渗透率,并且在商业上,SST由于其中频隔离而重量轻,因此在牵引应用中受到关注。碳化硅(SiC)功率半导体器件技术的最新进展正在创造一种新的范例,如最近报道的,分立功率半导体器件的发展在10-15 kV范围内,甚至超过22 kV。与仅限于6.5 kV阻断的硅(Si)IGBT相比,这些高压(HV)SiC器件能够实现更简单的转换器拓扑结构,并提高效率和可靠性,同时大幅降低MV功率转换系统的尺寸和重量。本文首次展示了由15 kV SiC n-IGBT实现的三相中压并网100 kVA SST的演示结果,重点介绍了系统设计和控制考虑。15 kV SiC n-IGBT由Cree开发,由Powerex封装。SST的低压(LV)侧采用1,200 V、100 A SiC MOSFET模块。电流隔离由三个单相22 kV/800 V、10 kHz、35 kVA额定高频(HF)变压器提供。与13.8 kV和480 V配电网连接的三相全SiC SST被称为无变压器智能变电站(TIPS)。15 kV SiC n-IGBT的特性、MV隔离栅极驱动器的开发以及TIPS的设计、控制和系统演示由北卡罗来纳州州立大学(NCSU)的未来可再生电能输送和管理(FREEDM)系统中心承担,该中心由高级研究项目可再生能源(ARPA-E)项目赞助。
The solid-state transformer (SST) is a promising power electronics solution that provides voltage regulation, reactive power compensation, dc-sourced renewable integration, and communication capabilities, in addition to the traditional step-up/step-down functionality of a transformer. It is gaining widespread attention for medium-voltage (MV) grid interfacing to enable increases in renewable energy penetration, and, commercially, the SST is of interest for traction applications due to its light weight as a result of medium-frequency isolation. The recent advancements in silicon carbide (SiC) power semiconductor device technology are creating a new paradigm with the development of discrete power semiconductor devices in the range of 10-15 kV and even beyond-up to 22 kV, as recently reported. In contrast to silicon (Si) IGBTs, which are limited to 6.5-kV blocking, these high-voltage (HV) SiC devices are enabling much simpler converter topologies and increased efficiency and reliability, with dramatic reductions of the size and weight of the MV power-conversion systems. This article presents the first-ever demonstration results of a three-phase MV grid-connected 100-kVA SST enabled by 15-kV SiC n-IGBTs, with an emphasis on the system design and control considerations. The 15-kV SiC n-IGBTs were developed by Cree and packaged by Powerex. The low-voltage (LV) side of the SST is built with 1,200-V, 100-A SiC MOSFET modules. The galvanic isolation is provided by three single-phase 22-kV/800-V, 10-kHz, 35-kVA-rated high-frequency (HF) transformers. The three-phase all-SiC SST that interfaces with 13.8-kV and 480-V distribution grids is referred to as a transformerless intelligent power substation (TIPS). The characterization of the 15-kV SiC n-IGBTs, the development of the MV isolated gate driver, and the design, control, and system demonstration of the TIPS were undertaken by North Carolina State University's (NCSU's) Future Renewable Electrical Energy Delivery and Management (FREEDM) Systems Center, sponsored by an Advanced Research Projects Agency-Energy (ARPA-E) project.