Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain
Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain
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DOI：
10.1063/1.3563705
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发表时间：
2011-03-07
影响因子：
4
通讯作者：
Du, X. L.
中科院分区：
文献类型：
--
作者：
Hou, Y. N.;Mei, Z. X.;Du, X. L.
在优质纤锌矿Mg0.55Zn0.45O外延膜上制备了肖特基型金属-半导体-金属日盲紫外探测器。在130 V偏压下，光响应谱的响应峰值为22 mA/W。在270 nm的波长处识别出尖锐的截止，并且时间响应测量表明小于500 ns的快速衰减时间。一个大的内部增益被观察到，并解释了减少肖特基势垒高度模型，这符合实验数据。(C)2011年美国物理学会。[doi：10.1063/1.3563705]
A Schottky type metal-semiconductor-metal solar-blind ultraviolet detector was fabricated on high quality wurtzite Mg0.55Zn0.45O epitaxial film. Photoresponse spectra show a responsivity peak of 22 mA/W under 130 V bias. A sharp cutoff was recognized at a wavelength of 270 nm, and a temporal response measurement indicates a fast decay time of less than 500 ns. A large internal gain was observed and interpreted by a reduced Schottky barrier height model, which fits well with the experimental data. (C) 2011 American Institute of Physics. [doi:10.1063/1.3563705]