Exploring the effects of interfacial carrier transport layers on device performance and optoelectronic properties of planar perovskite solar cells
Exploring the effects of interfacial carrier transport layers on device performance and optoelectronic properties of planar perovskite solar cells
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DOI：
10.1039/c7tc02822a
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发表时间：
2017-09-14
影响因子：
6.4
通讯作者：
Miyano, Kenjiro
中科院分区：
文献类型：
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作者：
Khadka, Dhruba B.;Shirai, Yasuhiro;Miyano, Kenjiro
通过对器件光电特性的分析，研究了载流子传输层对钙钛矿型器件性能的影响及限制因素。通过用PTAA代替空穴传输层（HTL）PEDOT：PSS，器件效率从类似于14.5%提高到类似于18.1%，这取决于开路电压和短路电流的增加。我们发现，PTAA器件导致界面层质量的改善，有效的载流子输运和体缺陷活动的缓解。温度和强度依赖的电流-电压特性的分析表明，PEDOT：PSS器件的限制界面和陷阱辅助复合。电容谱和电致发光显示，PTAA器件具有较好的界面质量和较浅的缺陷水平，从而缓解了复合活动。我们的研究结果巩固了钙钛矿薄膜和界面质量和器件中的复合活动的主要影响HTLs，这为进一步提高效率加上良好的界面载流子传输层铺平了道路。
We investigated the effects of carrier transport layer on performance of perovskite device and limitation factors by analysing the optoelectronic properties. The device efficiency was enhanced from similar to 14.5% to similar to 18.1% by replacing hole transport layer (HTL) PEDOT:PSS with PTAA, governed by increase in open circuit voltage and short circuit current. We found that PTAA device leads to the improvement in interface layer quality, efficient carrier transport and mitigation of bulk defect activities. The analysis of temperature and intensity dependent current-voltage characteristics suggests that PEDOT: PSS device is limited by interface and trap assisted recombination. The capacitance spectroscopy and electroluminescence revealed soothing of recombination activities as a consequence of better interface quality and shallower defect level for PTAA device. Our results consolidate that the perovskite film and interface quality and recombination activities in device are dominantly influenced by HTLs which pave a way for further enhancement in efficiency coupled with excellent interfacial carrier transport layer.