Nonlocal magnetoresistance due to Lorentz force in linear transport region in bulk silicon
Nonlocal magnetoresistance due to Lorentz force in linear transport region in bulk silicon
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DOI：
10.1063/1.4851916
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发表时间：
2013-12
影响因子：
4
通讯作者：
C. Wan;Z. Yuan;P. Liu;Hao Wu;P. Guo;D. L. Li;S. Ali
中科院分区：
文献类型：
--
作者：
C. Wan;Z. Yuan;P. Liu;Hao Wu;P. Guo;D. L. Li;S. Ali
在线性输运区研究了轻掺杂体硅的磁电阻。非局域磁流变和局域磁流变都是由洛伦兹力对载流子平面内输运的偏转引起的。然而，非局部磁共振比局部磁共振大近一个数量级。我们将增强的非局部磁流变归因于在阳极和阴极附近边界上积累的极性守恒电荷改变了电位分布，同时增加了非局部区域的电流流动。这种非局部磁流变机理可以推广到其他具有高或中等迁移率的材料。
Magnetoresistance (MR) of lightly doped bulk silicon has been studied in linear transport region. Both nonlocal and local MR results from deflection of in-plane transport of carriers by Lorentz force. However, nonlocal MR is nearly one order of magnitude larger than local one. We ascribe the enhanced nonlocal MR to polarity-conserved charges accumulated on boundaries near anode and cathode, which alters potential distribution and meanwhile increases current flowing in nonlocal region. This mechanism of nonlocal MR can be generalized to other materials with high or moderate mobility.