Ultraviolet luminescence in AlN
Ultraviolet luminescence in AlN
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DOI：
10.1002/pssb.201046616
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发表时间：
2011-06
期刊：
影响因子：
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通讯作者：
T. Schulz;M. Albrecht;K. Irmscher;C. Hartmann;J. Wollweber;R. Fornari
中科院分区：
文献类型：
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作者：
T. Schulz;M. Albrecht;K. Irmscher;C. Hartmann;J. Wollweber;R. Fornari
在绝缘、n型和辐照损伤的AlN中，研究了在3和4 eV之间的近UV区域中的缺陷相关发光。一个单一的发光带约3.3 eV的半峰全宽超过500 meV，是由于在低温下的施主-受主对跃迁。的实质性的线宽和斯托克斯位移约1.3 eV的深受主强的电子-声子耦合的结果。虽然施主的化学性质仍不明确，但受主物种归因于孤立的Al空位，即${\rmV}_{{\rmAl}}^{{\rm 3}{-} } $。这种发光带可能对研究AlN中的n型补偿机制很有意义。
The defect related luminescence in the near UV region between 3 and 4 eV has been investigated in insulating, n‐type and irradiation damaged AlN. A single luminescence band around 3.3 eV with a full width at half maximum of more than 500 meV, is attributed to a donor–acceptor pair transition at low temperatures. The substantial linewidth and a Stokes shift of around 1.3 eV result from strong electron–phonon coupling of the deep acceptor. While the chemical nature of the donor remains ambiguous, the acceptor species is attributed to the isolated Al vacancy, i.e. ${\rm V}_{{\rm Al}}^{{\rm 3}{-} } $. This luminescence band might be interesting for studying n‐type compensation mechanisms in AlN.